摘要
We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.
原文 | English |
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頁(從 - 到) | 319-322 |
頁數 | 4 |
期刊 | Technical Digest - International Electron Devices Meeting |
出版狀態 | Published - 12月 2003 |
事件 | IEEE International Electron Devices Meeting - Washington, DC, 美國 持續時間: 8 12月 2003 → 10 12月 2003 |