We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.
|頁（從 - 到）||319-322|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 十二月 2003|
|事件||IEEE International Electron Devices Meeting - Washington, DC, United States|
持續時間: 8 十二月 2003 → 10 十二月 2003