Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs

C. H. Huang*, D. S. Yu, Albert Chin, C. H. Wu, W. J. Chen, Chunxiang Zhu, M. F. Li, Byung Jin Cho, Dim Lee Kwong

*此作品的通信作者

    研究成果: Conference article同行評審

    40 引文 斯高帕斯(Scopus)

    摘要

    We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.

    原文English
    頁(從 - 到)319-322
    頁數4
    期刊Technical Digest - International Electron Devices Meeting
    出版狀態Published - 12月 2003
    事件IEEE International Electron Devices Meeting - Washington, DC, United States
    持續時間: 8 12月 200310 12月 2003

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