We fabricated a Ge junctionless p-channel metal–oxide–semiconductor field-effect transistor (JL pMOSFET) with a raised metal source/drain (S/D) composed of a metal alloy. An ultrathin-body Ge channel was trimmed to 10 nm, which is lower than the maximum depletion width, to completely switch off the device. The fabricated Ge JL pMOSFET containing a raised Ni/NiGe S/D exhibited a high on/off current ratio (Ion/Ioff) value (approximately 105 at VDS = −0.1 V). The S/D series resistance of the full metal S/D structure was exactly lower than the structures of Ge/NiGe and Ge bulk S/D. Synopsys Technology Computer-Aided Design tools were used to confirm the advantages of the full metal S/D structure and demonstrate the enhancement of the S/D resistance in a device with scaled gate length. The proposed scheme is suitable for reducing the series resistance of a device with minimized dimensions.
|頁（從 - 到）||P507-P511|
|期刊||ECS Journal of Solid State Science and Technology|
|出版狀態||Published - 1 1月 2017|