Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

Sung-Wen Huang Chen, Yu-Ming Huang, Konthoujam James Singh, Yu-Chien Hsu, Fang-Jyun Liou, Jie Song, Joowon Choi, Po-Tsung Lee, Chien-Chung Lin, Zhong Chen, Jung Han, Tingzhu Wu*, Hao-Chung Kuo*

*此作品的通信作者

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

Red-green-blue (RGB) full-color micro light-emitting diodes (mu-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN mu-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar mu-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under 200 A/cm(2 )injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar mu-LEDs' emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020). (C) 2020 Chinese Laser Press

原文English
頁(從 - 到)630-636
頁數7
期刊Photonics Research
8
發行號5
DOIs
出版狀態Published - 1 五月 2020

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