Fourier transform infrared spectroscopic study of oxide films grown in pure n2О

Tien-Sheng Chao; Wen Ho Chen; Tan Fu Lei

doi:10.1143/JJAP.34.2370

Fourier transform infrared spectroscopic study of oxide films grown in pure n₂О

Tien-Sheng Chao, Wen Ho Chen, Tan Fu Lei

電子物理學系

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

The properties of the oxide films grown by pure N₂О were studied in this work. A two-layer model, considering a N₂О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N₂О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Å.

原文	English
頁（從 - 到）	2370-2373
頁數	4
期刊	Japanese journal of applied physics
卷	34
發行號	5R
DOIs	https://doi.org/10.1143/JJAP.34.2370
出版狀態	Published - 5月 1995

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10.1143/JJAP.34.2370

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title = "Fourier transform infrared spectroscopic study of oxide films grown in pure n2О",

abstract = "The properties of the oxide films grown by pure N2О were studied in this work. A two-layer model, considering a N2О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 {\AA}.",

keywords = "Ellipsometer, FTIR, NO, Oxide",

author = "Tien-Sheng Chao and Chen, {Wen Ho} and Lei, {Tan Fu}",

year = "1995",

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AU - Chen, Wen Ho

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N2 - The properties of the oxide films grown by pure N2О were studied in this work. A two-layer model, considering a N2О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Å.

AB - The properties of the oxide films grown by pure N2О were studied in this work. A two-layer model, considering a N2О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Å.

KW - Ellipsometer

KW - FTIR

KW - NO

KW - Oxide

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5R

ER -

Fourier transform infrared spectroscopic study of oxide films grown in pure n2О

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Fourier transform infrared spectroscopic study of oxide films grown in pure n₂О