The fabrication of Cu gates for thin-film transistors (TFTs) by electrodeposition through mask on a Ni layer has been developed. After pretreatment in acid sulfate solution, a Cu deposit acquires the property of good adhesion on a Ni layer. Organic additives [e.g., poly(ethylene glycol) (PEG), bis(3-sodiumsulfopropyl) disulfide (SPS)] were used to create the desired tapered shape of the deposited Cu pattern on a Ni layer. Furthermore, a multilayer Cu gate for TFTs was fabricated after the selective etching of the nickel layer. The new method provides an alternative wet process for fabricating Cu gates for TFTs.
|頁（從 - 到）||L1215–L1218|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 10 11月 2006|