Forming-free bipolar resistive switching in nonstoichiometric ceria films

Muhammad Ismail; Chun Yang Huang; Debashis Panda; Chung Jung Hung; Tsung Ling Tsai; Jheng Hong Jieng; Chun An Lin; Umesh Chand; Anwar Manzoor Rana; Ejaz Ahmed; Ijaz Talib; Muhammad Younus Nadeem; Tseung-Yuen Tseng

doi:10.1186/1556-276X-9-45

Forming-free bipolar resistive switching in nonstoichiometric ceria films

Muhammad Ismail, Chun Yang Huang, Debashis Panda, Chung Jung Hung, Tsung Ling Tsai, Jheng Hong Jieng, Chun An Lin, Umesh Chand, Anwar Manzoor Rana, Ejaz Ahmed, Ijaz Talib, Muhammad Younus Nadeem, Tseung-Yuen Tseng

電子研究所

研究成果: Article › 同行評審

98 引文斯高帕斯（Scopus）

摘要

The mechanism of forming-free bipolar resistive switching in a Zr/CeO_x/Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrO_y layer at the Zr/CeO_x interface. X-ray diffraction studies of CeO_x films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeO_x film and in the nonstoichiometric ZrO_y interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).

原文	English
文章編號	45
頁（從 - 到）	1-8
頁數	8
期刊	Nanoscale Research Letters
卷	9
發行號	1
DOIs	https://doi.org/10.1186/1556-276X-9-45
出版狀態	Published - 1月 2014

存取文件

10.1186/1556-276X-9-45

其它文件與鏈接

Link to publication in Scopus

引用此

@article{6fb768fbfff24114aa3f4264208b2f54,

title = "Forming-free bipolar resistive switching in nonstoichiometric ceria films",

abstract = "The mechanism of forming-free bipolar resistive switching in a Zr/CeOx/Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrOy layer at the Zr/CeOx interface. X-ray diffraction studies of CeOx films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeOx film and in the nonstoichiometric ZrOy interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).",

keywords = "Cerium oxide, Metal-insulator-metal structure, Oxygen vacancy, Resistive switching, Space charge-limited conduction (SCLC)",

author = "Muhammad Ismail and Huang, {Chun Yang} and Debashis Panda and Hung, {Chung Jung} and Tsai, {Tsung Ling} and Jieng, {Jheng Hong} and Lin, {Chun An} and Umesh Chand and Rana, {Anwar Manzoor} and Ejaz Ahmed and Ijaz Talib and Nadeem, {Muhammad Younus} and Tseung-Yuen Tseng",

year = "2014",

month = jan,

doi = "10.1186/1556-276X-9-45",

language = "English",

volume = "9",

pages = "1--8",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Forming-free bipolar resistive switching in nonstoichiometric ceria films

AU - Ismail, Muhammad

AU - Huang, Chun Yang

AU - Panda, Debashis

AU - Hung, Chung Jung

AU - Tsai, Tsung Ling

AU - Jieng, Jheng Hong

AU - Lin, Chun An

AU - Chand, Umesh

AU - Rana, Anwar Manzoor

AU - Ahmed, Ejaz

AU - Talib, Ijaz

AU - Nadeem, Muhammad Younus

AU - Tseng, Tseung-Yuen

PY - 2014/1

Y1 - 2014/1

N2 - The mechanism of forming-free bipolar resistive switching in a Zr/CeOx/Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrOy layer at the Zr/CeOx interface. X-ray diffraction studies of CeOx films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeOx film and in the nonstoichiometric ZrOy interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).

AB - The mechanism of forming-free bipolar resistive switching in a Zr/CeOx/Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrOy layer at the Zr/CeOx interface. X-ray diffraction studies of CeOx films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeOx film and in the nonstoichiometric ZrOy interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).

KW - Cerium oxide

KW - Metal-insulator-metal structure

KW - Oxygen vacancy

KW - Resistive switching

KW - Space charge-limited conduction (SCLC)

UR - http://www.scopus.com/inward/record.url?scp=84897782326&partnerID=8YFLogxK

U2 - 10.1186/1556-276X-9-45

DO - 10.1186/1556-276X-9-45

M3 - Article

AN - SCOPUS:84897782326

SN - 1931-7573

VL - 9

SP - 1

EP - 8

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 45

ER -

Forming-free bipolar resistive switching in nonstoichiometric ceria films

摘要

存取文件

其它文件與鏈接

指紋

引用此