Formation of TiSi₂ on nitrogen ion implanted (001)Si

Formation of TiSi₂ on nitrogen ion implanted (001)Si has been investigated. Nitrogen ion implantation was found to suppress the B and As diffusion in silicon. For Ti on 30 keV BF₂⁺-20 keV N₂⁺ and 30 keV As⁺-20 keV N₂⁺ implanted samples, a continuous low-resistivity TiSi2 layer was found to form in all samples annealed at 700-900 °C. For Ti on 1 × 10¹⁵/cm² N₂⁺- and As⁺ implanted samples, end-of-range defects were completely eliminated in all samples annealed at 700-900 °C. The results indicated that with appropriate control, N⁺-implantation can be successfully implemented in forming low-resistivity TiSi₂ contacts on shallow junctions in deep submicron devices.