Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma

Pei-Wen Li; H. K. Liou; E. S. Yang; S. S. Iyer; T. P. Smith; Z. Lu

doi:10.1063/1.106714

Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma

Pei-Wen Li^*, H. K. Liou, E. S. Yang, S. S. Iyer, T. P. Smith, Z. Lu

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

33 引文斯高帕斯（Scopus）

摘要

Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO ₂ and GeO ₂ . Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO ₂ component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.

原文	English
頁（從 - 到）	3265-3267
頁數	3
期刊	Applied Physics Letters
卷	60
發行號	26
DOIs	https://doi.org/10.1063/1.106714
出版狀態	Published - 1 12月 1992

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abstract = " Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO 2 and GeO 2 . Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO 2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species. ",

author = "Pei-Wen Li and Liou, {H. K.} and Yang, {E. S.} and Iyer, {S. S.} and Smith, {T. P.} and Z. Lu",

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AU - Li, Pei-Wen

AU - Liou, H. K.

AU - Yang, E. S.

AU - Iyer, S. S.

AU - Smith, T. P.

AU - Lu, Z.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO 2 and GeO 2 . Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO 2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.

AB - Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO 2 and GeO 2 . Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO 2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma

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