Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application

Wei Ren Chen; Ting Chang Chang; Po-Tsun Liu; Chun Hao Tu; Feng Weng Chi; Shu Wei Tsao; Chun Yen Chang

doi:10.1016/j.surfcoat.2007.07.101

Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application

Wei Ren Chen, Ting Chang Chang^*, Po-Tsun Liu, Chun Hao Tu, Feng Weng Chi, Shu Wei Tsao, Chun Yen Chang

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光電工程學系

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4 引文斯高帕斯（Scopus）

摘要

The formation of stacked nickel-silicide nanocrystals by using a co-mixed target is proposed in this paper. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide after rapid thermal oxidation. The obvious memory window can be used to define "1" and "0" states at low voltage operation. In addition, the program/erase characteristics have different charge/discharge efficiency due to the effect of stacked structure. Furthermore, good endurance and retention characteristics are exhibited for nonvolatile memory application. Besides, this technology is suitable for the fabrication of current nonvolatile memory and application of low power device.

原文	English
頁（從 - 到）	1292-1296
頁數	5
期刊	Surface and Coatings Technology
卷	202
發行號	4-7
DOIs	https://doi.org/10.1016/j.surfcoat.2007.07.101
出版狀態	Published - 15 12月 2007

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10.1016/j.surfcoat.2007.07.101

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title = "Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application",

abstract = "The formation of stacked nickel-silicide nanocrystals by using a co-mixed target is proposed in this paper. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide after rapid thermal oxidation. The obvious memory window can be used to define {"}1{"} and {"}0{"} states at low voltage operation. In addition, the program/erase characteristics have different charge/discharge efficiency due to the effect of stacked structure. Furthermore, good endurance and retention characteristics are exhibited for nonvolatile memory application. Besides, this technology is suitable for the fabrication of current nonvolatile memory and application of low power device.",

keywords = "Metal nanocrystal, Nickel-silicide, Nonvolatile memory",

author = "Chen, {Wei Ren} and Chang, {Ting Chang} and Po-Tsun Liu and Tu, {Chun Hao} and Chi, {Feng Weng} and Tsao, {Shu Wei} and Chang, {Chun Yen}",

year = "2007",

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day = "15",

doi = "10.1016/j.surfcoat.2007.07.101",

language = "English",

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TY - JOUR

T1 - Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application

AU - Chen, Wei Ren

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Tu, Chun Hao

AU - Chi, Feng Weng

AU - Tsao, Shu Wei

AU - Chang, Chun Yen

PY - 2007/12/15

Y1 - 2007/12/15

N2 - The formation of stacked nickel-silicide nanocrystals by using a co-mixed target is proposed in this paper. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide after rapid thermal oxidation. The obvious memory window can be used to define "1" and "0" states at low voltage operation. In addition, the program/erase characteristics have different charge/discharge efficiency due to the effect of stacked structure. Furthermore, good endurance and retention characteristics are exhibited for nonvolatile memory application. Besides, this technology is suitable for the fabrication of current nonvolatile memory and application of low power device.

AB - The formation of stacked nickel-silicide nanocrystals by using a co-mixed target is proposed in this paper. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide after rapid thermal oxidation. The obvious memory window can be used to define "1" and "0" states at low voltage operation. In addition, the program/erase characteristics have different charge/discharge efficiency due to the effect of stacked structure. Furthermore, good endurance and retention characteristics are exhibited for nonvolatile memory application. Besides, this technology is suitable for the fabrication of current nonvolatile memory and application of low power device.

KW - Metal nanocrystal

KW - Nickel-silicide

KW - Nonvolatile memory

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DO - 10.1016/j.surfcoat.2007.07.101

M3 - Article

AN - SCOPUS:36048962783

SN - 0257-8972

VL - 202

SP - 1292

EP - 1296

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 4-7

ER -

Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application

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