Formation of silicon-gold eutectic bond using localized heating method

Liwei Lin, Yu-Ting Cheng, Khalil Najafi

研究成果: Article同行評審

55 引文 斯高帕斯(Scopus)

摘要

A new bonding technique is proposed by using localized heating to supply the bonding energy. Heating is achieved by applying a dc current through micromachined heaters made of gold which serves as both the heating and bonding material. At the interface of silicon and gold, the formation of eutectic bond takes place in about 5 minutes. Assembly of two substrates in microfabrication processes can be achieved by using this method. In this paper the following important results are obtained: 1) Gold diffuses into silicon to form a strong eutectic bond by means of localized heating. 2) The bonding strength reaches the fracture toughness of the bulk silicon. 3) This bonding technique greatly simplifies device fabrication and assembly processes.

原文English
頁(從 - 到)L1412-L1414
期刊Japanese Journal of Applied Physics, Part 2: Letters
37
發行號11 SUPPL. B
DOIs
出版狀態Published - 15 11月 1998

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