Formation of silicon germanium nitride layer with distributed charge storage elements

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Hsin Chou Liu, Wei Ren Chen, Chia Chou Tsai, Li Ting Chang, Chun Yen Chang

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The formation of silicon germanium nitride (SiGeN) with distributed charge storage elements is proposed in this work. A large memory window is observed due to the retainable dangling bonds inside the SiGeN gate stack layer. The nonvolatile memory device with the high-temperature oxidized SiGeN stack layer exhibits 2 V threshold voltage shift under 7 V write operation, which is sufficient for a memory device to define the signal "0" and "1." Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices.

原文English
文章編號112105
頁數2
期刊Applied Physics Letters
88
發行號11
DOIs
出版狀態Published - 13 3月 2006

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