摘要
The formation of silicon germanium nitride (SiGeN) with distributed charge storage elements is proposed in this work. A large memory window is observed due to the retainable dangling bonds inside the SiGeN gate stack layer. The nonvolatile memory device with the high-temperature oxidized SiGeN stack layer exhibits 2 V threshold voltage shift under 7 V write operation, which is sufficient for a memory device to define the signal "0" and "1." Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices.
原文 | English |
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文章編號 | 112105 |
頁數 | 2 |
期刊 | Applied Physics Letters |
卷 | 88 |
發行號 | 11 |
DOIs | |
出版狀態 | Published - 13 3月 2006 |