Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films

M. Eizenberg*, H. Foell, King-Ning Tu

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34 引文 斯高帕斯(Scopus)

摘要

A series of codeposited alloy films of Pt-Si with a composition changing from Pt75Si25 to Pt50Si50 and of Pd-Si changing from Pd75Si25 to Pd67Si 33 have been prepared on Si for a systematic study of shallow silicide contacts. The effects of alloy composition and heat treatment on the formation and properties of these contacts have been investigated by I-V measurement of Schottky barrier height, glancing incidence x-ray diffraction, and cross-sectional transmission electron microscopy. Shallow contacts with a depth of about 10 nm and with the Schottky barrier height of PtSi and Pd 2Si have been achieved.

原文English
頁(從 - 到)861-868
頁數8
期刊Journal of Applied Physics
52
發行號2
DOIs
出版狀態Published - 1 12月 1981

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