摘要
The formation of repetitively nanosecond spatial solitons in a saturable absorber Q-switched microchip laser was investigated. The controlling of the self-focusing effect in a nearly hemispherical resonator, results in the formation of high-peak-power spatial localized structures. The transition is from the spatially localized structures from amplitude-dominant domains to phase-dominant solitons. The co-existence of the amplitude and the phase solitons in a saturable absorber Q-switched laser was also observed.
原文 | English |
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頁(從 - 到) | 13901 |
頁數 | 1 |
期刊 | Physical Review Letters |
卷 | 93 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2 7月 2004 |