Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Hsin Chou Liu, Chia Chou Tsai, Li Ting Chang, Tseung-Yuen Tseng, Simon M. Sze, Chun Yen Chang

*此作品的通信作者

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxidized SiGeN layer. The nonvolatile memory with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 10 V write operation. Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices.

原文English
文章編號052112
頁數3
期刊Applied Physics Letters
89
發行號5
DOIs
出版狀態Published - 31 7月 2006

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