Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition

L. C. Chen; C. Y. Yang; D. M. Bhusari; K. H. Chen; Ming-Chang Lin; J. C. Lin; T. J. Chuang

doi:10.1016/0925-9635(96)80070-7

Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition

L. C. Chen^*, C. Y. Yang, D. M. Bhusari, K. H. Chen, Ming-Chang Lin, J. C. Lin, T. J. Chuang

^*此作品的通信作者

應用化學系

研究成果: Article › 同行評審

115 引文斯高帕斯（Scopus）

摘要

We report that carbon nitride thin films can be formed by microwave plasma-enhanced chemical vapor deposition (PECVD). Gas mixtures containing CH₄, H₂, and NH₃ in various ratios were tried as the precursors, and a Si(100) wafer was used as the substrate. The films were characterized by X-ray photoelectron spectroscopy (XPS), and electron microscopy (both SEM and TEM). A Si content of about half of the carbon content was observed when the substrate temperature exceeded 1000 °C. Microscopic investigation revealed the coexistence of large-grain (over 10 μm) and fine-grain (under 1 μm) crystals. We suggest the presence of a crystalline carbon nitride phase corresponding to an α-C₃N₄ structure (isomorphic to α-Si₃N₄), which may also be a stable hard material.

原文	English
頁（從 - 到）	514-518
頁數	5
期刊	Diamond and Related Materials
卷	5
發行號	3-5
DOIs	https://doi.org/10.1016/0925-9635(96)80070-7
出版狀態	Published - 4月 1996

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title = "Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition",

abstract = "We report that carbon nitride thin films can be formed by microwave plasma-enhanced chemical vapor deposition (PECVD). Gas mixtures containing CH4, H2, and NH3 in various ratios were tried as the precursors, and a Si(100) wafer was used as the substrate. The films were characterized by X-ray photoelectron spectroscopy (XPS), and electron microscopy (both SEM and TEM). A Si content of about half of the carbon content was observed when the substrate temperature exceeded 1000 °C. Microscopic investigation revealed the coexistence of large-grain (over 10 μm) and fine-grain (under 1 μm) crystals. We suggest the presence of a crystalline carbon nitride phase corresponding to an α-C3N4 structure (isomorphic to α-Si3N4), which may also be a stable hard material.",

keywords = "Carbon nitride, Microwave PECVD, Transmission electron diffraction, X-Ray photoelectron spectroscopy",

author = "Chen, {L. C.} and Yang, {C. Y.} and Bhusari, {D. M.} and Chen, {K. H.} and Ming-Chang Lin and Lin, {J. C.} and Chuang, {T. J.}",

year = "1996",

month = apr,

doi = "10.1016/0925-9635(96)80070-7",

language = "English",

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T1 - Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition

AU - Chen, L. C.

AU - Yang, C. Y.

AU - Bhusari, D. M.

AU - Chen, K. H.

AU - Lin, Ming-Chang

AU - Lin, J. C.

AU - Chuang, T. J.

PY - 1996/4

Y1 - 1996/4

N2 - We report that carbon nitride thin films can be formed by microwave plasma-enhanced chemical vapor deposition (PECVD). Gas mixtures containing CH4, H2, and NH3 in various ratios were tried as the precursors, and a Si(100) wafer was used as the substrate. The films were characterized by X-ray photoelectron spectroscopy (XPS), and electron microscopy (both SEM and TEM). A Si content of about half of the carbon content was observed when the substrate temperature exceeded 1000 °C. Microscopic investigation revealed the coexistence of large-grain (over 10 μm) and fine-grain (under 1 μm) crystals. We suggest the presence of a crystalline carbon nitride phase corresponding to an α-C3N4 structure (isomorphic to α-Si3N4), which may also be a stable hard material.

AB - We report that carbon nitride thin films can be formed by microwave plasma-enhanced chemical vapor deposition (PECVD). Gas mixtures containing CH4, H2, and NH3 in various ratios were tried as the precursors, and a Si(100) wafer was used as the substrate. The films were characterized by X-ray photoelectron spectroscopy (XPS), and electron microscopy (both SEM and TEM). A Si content of about half of the carbon content was observed when the substrate temperature exceeded 1000 °C. Microscopic investigation revealed the coexistence of large-grain (over 10 μm) and fine-grain (under 1 μm) crystals. We suggest the presence of a crystalline carbon nitride phase corresponding to an α-C3N4 structure (isomorphic to α-Si3N4), which may also be a stable hard material.

KW - Carbon nitride

KW - Microwave PECVD

KW - Transmission electron diffraction

KW - X-Ray photoelectron spectroscopy

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U2 - 10.1016/0925-9635(96)80070-7

DO - 10.1016/0925-9635(96)80070-7

M3 - Article

AN - SCOPUS:0000140081

SN - 0925-9635

VL - 5

SP - 514

EP - 518

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-5

ER -

Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition

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