Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory

Chih Wei Hu; Ting Chang Chang; Po-Tsun Liu; Chun Hao Tu; Sheng Kai Lee; Simon M. Sze; Chun Yen Chang; Bi Shiou Chiou; Tseung-Yuen Tseng

doi:10.1063/1.2908916

Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory

Chih Wei Hu^*, Ting Chang Chang, Po-Tsun Liu, Chun Hao Tu, Sheng Kai Lee, Simon M. Sze, Chun Yen Chang, Bi Shiou Chiou, Tseung-Yuen Tseng

^*此作品的通信作者

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si0.5 Ge0.5). The deposited film was annealed in oxygen ambient at 650 °C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide- silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements.

原文	English
文章編號	152115
頁數	3
期刊	Applied Physics Letters
卷	92
發行號	15
DOIs	https://doi.org/10.1063/1.2908916
出版狀態	Published - 2008

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abstract = "In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si0.5 Ge0.5). The deposited film was annealed in oxygen ambient at 650 °C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide- silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements.",

author = "Hu, {Chih Wei} and Chang, {Ting Chang} and Po-Tsun Liu and Tu, {Chun Hao} and Lee, {Sheng Kai} and Sze, {Simon M.} and Chang, {Chun Yen} and Chiou, {Bi Shiou} and Tseung-Yuen Tseng",

year = "2008",

doi = "10.1063/1.2908916",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory

AU - Hu, Chih Wei

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Tu, Chun Hao

AU - Lee, Sheng Kai

AU - Sze, Simon M.

AU - Chang, Chun Yen

AU - Chiou, Bi Shiou

AU - Tseng, Tseung-Yuen

PY - 2008

Y1 - 2008

N2 - In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si0.5 Ge0.5). The deposited film was annealed in oxygen ambient at 650 °C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide- silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements.

AB - In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si0.5 Ge0.5). The deposited film was annealed in oxygen ambient at 650 °C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide- silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements.

UR - http://www.scopus.com/inward/record.url?scp=42349104324&partnerID=8YFLogxK

U2 - 10.1063/1.2908916

DO - 10.1063/1.2908916

M3 - Article

AN - SCOPUS:42349104324

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152115

ER -

Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory

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