Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

Pei-Wen Li*, W. M. Liao, S. W. Lin, P. S. Chen, S. C. Lu, M. J. Tsai

*此作品的通信作者

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31 引文 斯高帕斯(Scopus)

摘要

An overview is given of the demonstration of a simple and effective method to form nanoscale Ge quantum dots by selective oxidation of SiGe/Si-on-insulator. The size and distribution of the Ge dots are strongly dependent on conditions of thermal oxidation and Ge content in Si1-xGex alloy. The Ge quantum dots formed by this method are embedded within silicon dioxide and would provide great potential for SE and optical devices application.

原文English
頁(從 - 到)4628-4630
頁數3
期刊Applied Physics Letters
83
發行號22
DOIs
出版狀態Published - 1 十二月 2003

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