Formation of an amorphous Rh-Si alloy by interfacial reaction between amorphous Si and crystalline Rh thin films

S. Herd*, King-Ning Tu, K. Y. Ahn

*此作品的通信作者

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100 引文 斯高帕斯(Scopus)

摘要

Interfacial reaction in bilayers of amorphous Si and crystalline Rh thin films has been studied by transmission electron diffraction and microscopy. In a bilayer of ∼190-Å amorphous Si and ∼60-Å polycrystalline Rh films, we have observed the formation of an amorphous Rh-Si alloy film upon thermal annealing at 300°C. The amorphous alloy film crystallizes into the RhSi phase at 400°C. On the other hand, no amorphous alloy formation was observed upon annealing a bilayer of ∼150-Å amorphous Si and ∼100-Å polycrystalline Rh films; instead, they react at 300°C to form Rh2Si, followed by the formation of RhSi or a mixture of RhSi and Rh5Si3 around 400°C.

原文English
頁(從 - 到)597-599
頁數3
期刊Applied Physics Letters
42
發行號7
DOIs
出版狀態Published - 1 12月 1983

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