Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition

Wei-Kuo Chen; Jyh-Cheng Chen; J. F. Chen; C. R. Wie; P. L. Liu; D. M. Hwang

doi:10.1117/12.961990

Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition

Wei-Kuo Chen^*, Jyh-Cheng Chen, J. F. Chen, C. R. Wie, P. L. Liu, D. M. Hwang

^*此作品的通信作者

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

原文	English
頁（從 - 到）	100-103
頁數	4
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	1144
DOIs	https://doi.org/10.1117/12.961990
出版狀態	Published - 28 11月 1989

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title = "Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition",

abstract = "We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.",

author = "Wei-Kuo Chen and Jyh-Cheng Chen and Chen, {J. F.} and Wie, {C. R.} and Liu, {P. L.} and Hwang, {D. M.}",

year = "1989",

month = nov,

day = "28",

doi = "10.1117/12.961990",

language = "English",

volume = "1144",

pages = "100--103",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

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TY - JOUR

T1 - Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition

AU - Chen, Wei-Kuo

AU - Chen, Jyh-Cheng

AU - Chen, J. F.

AU - Wie, C. R.

AU - Liu, P. L.

AU - Hwang, D. M.

PY - 1989/11/28

Y1 - 1989/11/28

N2 - We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

AB - We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

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U2 - 10.1117/12.961990

DO - 10.1117/12.961990

M3 - Article

AN - SCOPUS:0009773891

VL - 1144

SP - 100

EP - 103

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -

Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition

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