Flicker noise in nanoscale pMOSFETs with mobility enhancement engineering and dynamic body biases

Kuo Liang Yeh*, Chih You Ku, Wei Lun Hong, Jyh-Chyurn Guo

*此作品的通信作者

    研究成果: Conference contribution同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    The uni-axial compressive strain from e-SiGe S/D combined with dynamic body biases effect on flicker noise of pMOSFETs is presented in this paper. This compressive strain contributes higher mobility but the worse flicker noise in terms of higher SID/ID2 becomes a potential killer to RF/analog circuits. Forward body biases (FBB) can reduce the flicker noise but the degraded body bias effect in strained pMOSFETs makes it not as efficient as the standard ones without strain. Hooge's mobility fluctuation model is adopted to explain the uni-axial strain and dynamic body biases effect on flicker noise. The increase of Hooge parameter αH is identified the key factor responsible the degraded flicker noise in strained pMOSFETs.

    原文English
    主出版物標題Proceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
    頁面347-350
    頁數4
    DOIs
    出版狀態Published - 27 10月 2009
    事件2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009 - Boston, MA, United States
    持續時間: 7 6月 20099 6月 2009

    出版系列

    名字Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
    ISSN(列印)1529-2517

    Conference

    Conference2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
    國家/地區United States
    城市Boston, MA
    期間7/06/099/06/09

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