Flexible three-bit-per-cell resistive switching memory using a-IGZO TFTs

Shih Chieh Wu; Hsien Tsung Feng; Ming Jiue Yu; I. Ting Wang; Tuo-Hung Hou

doi:10.1109/LED.2013.2278098

Flexible three-bit-per-cell resistive switching memory using a-IGZO TFTs

Shih Chieh Wu, Hsien Tsung Feng, Ming Jiue Yu, I. Ting Wang, Tuo-Hung Hou

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

摘要

This letter proposes a novel high bit density nonvolatile memory using a logic compatible flexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) structure fabricated at low temperature. Before electrical forming, the a-IGZO TFT exhibits excellent transistor performance, including an ON/OFF current ratio of 8.8\times 10⁶, a steep subthreshold slope of 0.14 V/decade, a threshold voltage of 0.55 V, and a maximum field-effect mobility of 2 cm²/Vs. After electrical forming, a three-bit-per-cell resistive switching memory is realized using localized multilevel resistance states at the drain and source bits. Combining dual functionalities to achieve low-cost integration and excellent device characteristics at bending states, the proposed device is promising for future system-on-plastic applications.

原文	English
文章編號	6595599
頁（從 - 到）	1265-1267
頁數	3
期刊	IEEE Electron Device Letters
卷	34
發行號	10
DOIs	https://doi.org/10.1109/LED.2013.2278098
出版狀態	Published - 10月 2013

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abstract = "This letter proposes a novel high bit density nonvolatile memory using a logic compatible flexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) structure fabricated at low temperature. Before electrical forming, the a-IGZO TFT exhibits excellent transistor performance, including an ON/OFF current ratio of 8.8\times 106, a steep subthreshold slope of 0.14 V/decade, a threshold voltage of 0.55 V, and a maximum field-effect mobility of 2 cm2/Vs. After electrical forming, a three-bit-per-cell resistive switching memory is realized using localized multilevel resistance states at the drain and source bits. Combining dual functionalities to achieve low-cost integration and excellent device characteristics at bending states, the proposed device is promising for future system-on-plastic applications.",

keywords = "Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs), flexible electronics, random access memory (RRAM), resistive switching, three-bit-per-cell",

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AU - Yu, Ming Jiue

AU - Wang, I. Ting

AU - Hou, Tuo-Hung

PY - 2013/10

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N2 - This letter proposes a novel high bit density nonvolatile memory using a logic compatible flexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) structure fabricated at low temperature. Before electrical forming, the a-IGZO TFT exhibits excellent transistor performance, including an ON/OFF current ratio of 8.8\times 106, a steep subthreshold slope of 0.14 V/decade, a threshold voltage of 0.55 V, and a maximum field-effect mobility of 2 cm2/Vs. After electrical forming, a three-bit-per-cell resistive switching memory is realized using localized multilevel resistance states at the drain and source bits. Combining dual functionalities to achieve low-cost integration and excellent device characteristics at bending states, the proposed device is promising for future system-on-plastic applications.

AB - This letter proposes a novel high bit density nonvolatile memory using a logic compatible flexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) structure fabricated at low temperature. Before electrical forming, the a-IGZO TFT exhibits excellent transistor performance, including an ON/OFF current ratio of 8.8\times 106, a steep subthreshold slope of 0.14 V/decade, a threshold voltage of 0.55 V, and a maximum field-effect mobility of 2 cm2/Vs. After electrical forming, a three-bit-per-cell resistive switching memory is realized using localized multilevel resistance states at the drain and source bits. Combining dual functionalities to achieve low-cost integration and excellent device characteristics at bending states, the proposed device is promising for future system-on-plastic applications.

KW - Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs)

KW - flexible electronics

KW - random access memory (RRAM)

KW - resistive switching

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Flexible three-bit-per-cell resistive switching memory using a-IGZO TFTs

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