@inproceedings{e14af533b38f4b70aa8e1cf2be1096c1,
title = "Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility",
abstract = " The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10 4 pulse endurance, 10 4 s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications. ",
keywords = "Flexible, IGZO, Non-volatile Memory, Reliability, RRAM",
author = "Fan, {Yang Shun} and Hsu, {Ching Hui} and Chang, {Chih Hsiang} and Huang, {Wei Hsun} and Yu, {Ming Chang} and Po-Tsun Liu",
year = "2012",
month = dec,
day = "1",
language = "English",
isbn = "9781627486521",
series = "Proceedings of the International Display Workshops",
pages = "1820--1821",
booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",
note = "null ; Conference date: 04-12-2012 Through 07-12-2012",
}
