TY - GEN
T1 - Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films
AU - Meena, Jagan Singh
AU - Chu, Min Ching
AU - Ko, Fu-Hsiang
PY - 2010
Y1 - 2010
N2 - To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSixOy) and hafnium-silicate (HfSimOn) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma to enhance the electrical performance at low temperature (∼250 °C). The oxygen plasma may accept as most effective process at low temperature to surface oxidation of a dielectric film for flexible organic device. The results showed the satisfactory electrical characteristics for the corresponding films with low leakage current densities ∼10-9 Acm-2 at 5V and maximum- capacitance densities 12.10 (ZrSixOy) and 14.32 fF/μm2 (HfSi mOn), at 1MHz. These entire make the combinatorial thin oxide films based MIM capacitors to be very suitable for future flexible devices.
AB - To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSixOy) and hafnium-silicate (HfSimOn) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma to enhance the electrical performance at low temperature (∼250 °C). The oxygen plasma may accept as most effective process at low temperature to surface oxidation of a dielectric film for flexible organic device. The results showed the satisfactory electrical characteristics for the corresponding films with low leakage current densities ∼10-9 Acm-2 at 5V and maximum- capacitance densities 12.10 (ZrSixOy) and 14.32 fF/μm2 (HfSi mOn), at 1MHz. These entire make the combinatorial thin oxide films based MIM capacitors to be very suitable for future flexible devices.
UR - http://www.scopus.com/inward/record.url?scp=77951655857&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5425076
DO - 10.1109/INEC.2010.5425076
M3 - Conference contribution
AN - SCOPUS:77951655857
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 992
EP - 993
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -