@inproceedings{8bcfbd203411418d8423c3f2670fc213,
title = "Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips",
abstract = "For the first time, below 400°C-fabricated poly-Si MOSFETs and 6T -SRAM fabrication process was demonstrated on polyimide (PI) substrate for flexible and transparent monolithic 3DIC. Key enablers are 400-900 nm transparent laser-stop layer (LsL), laser-crystallized/CMP-thinned poly Si channel and pulse UV-laser S/D activation. These advanced low thermal budget fabrication technologies enable stackable polySi MOSFETs on flexible 6' -wafer-scale PI substrate with high device uniformity (Vth 'SS16.2%/16.6%) and bending stability (Vth/SS\sim 4.2\%/9.8\%) after cycle-bending at radius of 10mm. Such CMOS compatible technologies envision flexible 3D heterogeneous integration of circuits/optical sensors for human-skin adaptable Internet of Things (IoT) chips. ",
keywords = "flexible, inverter, laser, monolithic 3DIC, SRAM",
author = "Kao, {Ming Hsuan} and Chen, {Wei Hsiang} and Hou, {Po Cheng} and Huang, {Wen Hsien} and Shen, {Chang Hong} and Shieh, {Jia Min} and Yeh, {Wen Kuan}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 ; Conference date: 16-06-2020 Through 19-06-2020",
year = "2020",
month = jun,
doi = "10.1109/VLSITechnology18217.2020.9265079",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings",
address = "美國",
}