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Flash memory scaling: From material selection to performance improvement
Tuo-Hung Hou
*
, Jaegoo Lee, Jonathan T. Shaw, Edwin C. Kan
*
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引文 斯高帕斯(Scopus)
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Keyphrases
Flash Memory
100%
Performance Improvement
100%
Material Selection
100%
Memory Scaling
100%
CMOS Process
50%
Technology Node
50%
Erase Time
50%
Device Structure
50%
Heterogeneous Integration
50%
Quantum Transport
50%
Transport Processes
50%
System Interface
50%
Cycling Endurance
50%
Process Compatibility
50%
Read Disturbance
50%
Noise Margin
50%
65 Nm Technology
50%
Material Choice
50%
Functional Density
50%
Smart Integration
50%
Quantum CMOS
50%
Engineering
Nodes
100%
Flash Memory
100%
Performance Improvement
100%
Device Structure
100%
Noise Margin
100%
Flash Memory Scaling
100%
Electrostatic Force
100%
Computer Science
Flash Memory
100%
Performance Improvement
100%
Interface System
50%
Noise Margin
50%
Heterogeneous Integration
50%
Material Science
Density
100%
Material Selection
100%
Medicine and Dentistry
Flushing
100%
Buffer
50%