First-principles calculations on the schottky barrier height of the NiGe/N-type Ge contact with dopant segregation

Han Chi Lin, Chiung-Yuan Lin, Che Ju Shih, Bing-Yue Tsui

研究成果: Conference contribution同行評審

摘要

Effects of dopant segregation at the NiGe/Ge interface are analyzed theoretically and experimentally. First-principles calculations indicate that the physical Schottky barrier height would be reduced by the segregation of As by 0.081 eV. This small value is due to the Fermi-level pinning effect. Further improvement of the contact resistance may be achieved by reducing the interface states.

原文English
主出版物標題2014 International Symposium on Next-Generation Electronics, ISNE 2014
發行者IEEE Computer Society
ISBN(列印)9781479947805
DOIs
出版狀態Published - 1 一月 2014
事件3rd International Symposium on Next-Generation Electronics, ISNE 2014 - Taoyuan, Taiwan
持續時間: 7 五月 201410 五月 2014

出版系列

名字2014 International Symposium on Next-Generation Electronics, ISNE 2014

Conference

Conference3rd International Symposium on Next-Generation Electronics, ISNE 2014
國家/地區Taiwan
城市Taoyuan
期間7/05/1410/05/14

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