@inproceedings{39f034ff848746349d3462585484bd71,
title = "First-principles calculations on the schottky barrier height of the NiGe/N-type Ge contact with dopant segregation",
abstract = "Effects of dopant segregation at the NiGe/Ge interface are analyzed theoretically and experimentally. First-principles calculations indicate that the physical Schottky barrier height would be reduced by the segregation of As by 0.081 eV. This small value is due to the Fermi-level pinning effect. Further improvement of the contact resistance may be achieved by reducing the interface states.",
author = "Lin, {Han Chi} and Chiung-Yuan Lin and Shih, {Che Ju} and Bing-Yue Tsui",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/ISNE.2014.6839344",
language = "English",
isbn = "9781479947805",
series = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",
publisher = "IEEE Computer Society",
booktitle = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",
address = "美國",
note = "3rd International Symposium on Next-Generation Electronics, ISNE 2014 ; Conference date: 07-05-2014 Through 10-05-2014",
}