First-principles analysis of interfacial nanoscaled oxide layers of bonded N - And P -type GaAs wafers

Hao Ouyang*, Hsiao Hao Chiou, Yew-Chuhg Wu, Ji Hao Cheng, Wen Ouyang

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

First-principles analysis is applied in relating microstructures with properties of interfacial nanoscaled oxide layers of bonded N - and P -type GaAs wafers. Using high-resolution transmission electron microscope results, the detailed atomic arrangements of materials specimen can be obtained and fed into the first-principles calculations. Therefore, the corresponding electronic structure and associated property can be reliably derived to identify responsible microstructural features. The electrical performance is found to be closely related to the variation of nanosized interface morphology and types of wafers.

原文English
文章編號013710
期刊Journal of Applied Physics
102
發行號1
DOIs
出版狀態Published - 2 8月 2007

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