First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge

Chen Han Chou*, An Shih Shih, Shao Cheng Yu, Yu Hsi Lin, Yi He Tsai, Chiung-Yuan Lin, Wen Kuan Yeh, Chao-Hsin Chien

*此作品的通信作者

    研究成果: Article同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    This letter represents the first direct experimental demonstrations and mechanism proposal regarding abnormal palladium diffusion into germanium (Ge). Our experiments indicated that excess Ge atoms among palladium germanide alloy formation indirectly induce the abnormal out-diffusion of mass palladium atoms into Ge. Consequently, palladium germanide alloy on both n-type and p-type Ge form ohmic-like Schottky junctions. To identify this phenomenon, first-principle calculations and technology computer-aided design simulation were used to evaluate the electrical influence of palladium atoms in Ge. We discovered that the activated palladium atoms in Ge induce large midgap bulk-trap states, which contribute to a severe increment of trap-assisted tunneling current at the palladium germanide/Ge junction.

    原文English
    文章編號8470143
    頁(從 - 到)1632-1635
    頁數4
    期刊IEEE Electron Device Letters
    39
    發行號11
    DOIs
    出版狀態Published - 1 十一月 2018

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