First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro

Fu Kuo Hsueh; Je Min Hung; Sheng Po Huang; Yen Hsiang Huang; Cheng Xin Xue; Chang Hong Shen; Jia Min Shieh; Wen Cheng Chiu; Chao Cheng Lin; Bo Yuan Chen; Szu Ching Liu; Shih Wei Chen; Deng Yan Niou; Wen Hsien Huang; Kai Shin Li; Kun Kin Lin; Da Chiang Chang; Kun Ming Chen; Guo Wei Huang; Ci Ling Pan; Meng Fan Chang; Chenming Hu; Wen Kuan Yeh

doi:10.1109/IEDM13553.2020.9371892

First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro

Fu Kuo Hsueh, Je Min Hung, Sheng Po Huang, Yen Hsiang Huang, Cheng Xin Xue, Chang Hong Shen^*, Jia Min Shieh, Wen Cheng Chiu, Chao Cheng Lin, Bo Yuan Chen, Szu Ching Liu, Shih Wei Chen, Deng Yan Niou, Wen Hsien Huang, Kai Shin Li, Kun Kin Lin, Da Chiang Chang, Kun Ming Chen, Guo Wei Huang, Ci Ling PanMeng Fan Chang, Chenming Hu, Wen Kuan Yeh

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

6 引文斯高帕斯（Scopus）

摘要

For the first time, ultrafast laser annealed BEOL gate-all-around (GAA) transistor and FeFET memory were demonstrated with monolithic 3D near-memory-computing (NMC) circuit. The GAA MOSFETs employing ultrafast picosecond visible laser dopant activation exhibit record-high Ion (nFETs=407 uA/um, pFETs=345 uA/um). The BEOL FeFETs memory exhibits large memory window ΔVth = 1.2V, more than 106 cycle endurance. Moreover, the 3D stackability of the GAA MOSFETs and FeFET memory bit cell enable reduces the area of the NMC circuitry and improve the readout throughput.

原文	English
主出版物標題	2020 IEEE International Electron Devices Meeting, IEDM 2020
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	40.4.1-40.4.4
ISBN（電子）	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9371892
出版狀態	Published - 12 12月 2020
事件	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, 美國持續時間: 12 12月 2020 → 18 12月 2020

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2020-December
ISSN（列印）	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
國家/地區	美國
城市	Virtual, San Francisco
期間	12/12/20 → 18/12/20

存取文件

10.1109/IEDM13553.2020.9371892

其它文件與鏈接

Link to publication in Scopus

引用此

Hsueh, F. K., Hung, J. M., Huang, S. P., Huang, Y. H., Xue, C. X., Shen, C. H., Shieh, J. M., Chiu, W. C., Lin, C. C., Chen, B. Y., Liu, S. C., Chen, S. W., Niou, D. Y., Huang, W. H., Li, K. S., Lin, K. K., Chang, D. C., Chen, K. M., Huang, G. W., ... Yeh, W. K. (2020). First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro. 於 2020 IEEE International Electron Devices Meeting, IEDM 2020 (頁 40.4.1-40.4.4). 文章 9371892 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9371892

Hsueh, Fu Kuo ; Hung, Je Min ; Huang, Sheng Po 等. / First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro. 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 頁 40.4.1-40.4.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{9fcb3c01eae44c029df27364d0c3d4fa,

title = "First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro",

abstract = "For the first time, ultrafast laser annealed BEOL gate-all-around (GAA) transistor and FeFET memory were demonstrated with monolithic 3D near-memory-computing (NMC) circuit. The GAA MOSFETs employing ultrafast picosecond visible laser dopant activation exhibit record-high Ion (nFETs=407 uA/um, pFETs=345 uA/um). The BEOL FeFETs memory exhibits large memory window ΔVth = 1.2V, more than 106 cycle endurance. Moreover, the 3D stackability of the GAA MOSFETs and FeFET memory bit cell enable reduces the area of the NMC circuitry and improve the readout throughput.",

author = "Hsueh, {Fu Kuo} and Hung, {Je Min} and Huang, {Sheng Po} and Huang, {Yen Hsiang} and Xue, {Cheng Xin} and Shen, {Chang Hong} and Shieh, {Jia Min} and Chiu, {Wen Cheng} and Lin, {Chao Cheng} and Chen, {Bo Yuan} and Liu, {Szu Ching} and Chen, {Shih Wei} and Niou, {Deng Yan} and Huang, {Wen Hsien} and Li, {Kai Shin} and Lin, {Kun Kin} and Chang, {Da Chiang} and Chen, {Kun Ming} and Huang, {Guo Wei} and Pan, {Ci Ling} and Chang, {Meng Fan} and Chenming Hu and Yeh, {Wen Kuan}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

month = dec,

day = "12",

doi = "10.1109/IEDM13553.2020.9371892",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "40.4.1--40.4.4",

booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",

address = "美國",

}

Hsueh, FK, Hung, JM, Huang, SP, Huang, YH, Xue, CX, Shen, CH, Shieh, JM, Chiu, WC, Lin, CC, Chen, BY, Liu, SC, Chen, SW, Niou, DY, Huang, WH, Li, KS, Lin, KK, Chang, DC, Chen, KM, Huang, GW, Pan, CL, Chang, MF, Hu, C & Yeh, WK 2020, First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro. 於 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9371892, Technical Digest - International Electron Devices Meeting, IEDM, 卷 2020-December, Institute of Electrical and Electronics Engineers Inc., 頁 40.4.1-40.4.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, 美國, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9371892

First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro. / Hsueh, Fu Kuo; Hung, Je Min; Huang, Sheng Po 等.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 40.4.1-40.4.4 9371892 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2020-December).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro

AU - Hsueh, Fu Kuo

AU - Hung, Je Min

AU - Huang, Sheng Po

AU - Huang, Yen Hsiang

AU - Xue, Cheng Xin

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Chiu, Wen Cheng

AU - Lin, Chao Cheng

AU - Chen, Bo Yuan

AU - Liu, Szu Ching

AU - Chen, Shih Wei

AU - Niou, Deng Yan

AU - Huang, Wen Hsien

AU - Li, Kai Shin

AU - Lin, Kun Kin

AU - Chang, Da Chiang

AU - Chen, Kun Ming

AU - Huang, Guo Wei

AU - Pan, Ci Ling

AU - Chang, Meng Fan

AU - Hu, Chenming

AU - Yeh, Wen Kuan

PY - 2020/12/12

Y1 - 2020/12/12

N2 - For the first time, ultrafast laser annealed BEOL gate-all-around (GAA) transistor and FeFET memory were demonstrated with monolithic 3D near-memory-computing (NMC) circuit. The GAA MOSFETs employing ultrafast picosecond visible laser dopant activation exhibit record-high Ion (nFETs=407 uA/um, pFETs=345 uA/um). The BEOL FeFETs memory exhibits large memory window ΔVth = 1.2V, more than 106 cycle endurance. Moreover, the 3D stackability of the GAA MOSFETs and FeFET memory bit cell enable reduces the area of the NMC circuitry and improve the readout throughput.

AB - For the first time, ultrafast laser annealed BEOL gate-all-around (GAA) transistor and FeFET memory were demonstrated with monolithic 3D near-memory-computing (NMC) circuit. The GAA MOSFETs employing ultrafast picosecond visible laser dopant activation exhibit record-high Ion (nFETs=407 uA/um, pFETs=345 uA/um). The BEOL FeFETs memory exhibits large memory window ΔVth = 1.2V, more than 106 cycle endurance. Moreover, the 3D stackability of the GAA MOSFETs and FeFET memory bit cell enable reduces the area of the NMC circuitry and improve the readout throughput.

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U2 - 10.1109/IEDM13553.2020.9371892

DO - 10.1109/IEDM13553.2020.9371892

M3 - Conference contribution

AN - SCOPUS:85102938296

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 40.4.1-40.4.4

BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

Y2 - 12 December 2020 through 18 December 2020

ER -

Hsueh FK, Hung JM, Huang SP, Huang YH, Xue CX, Shen CH 等. First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro. 於 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 40.4.1-40.4.4. 9371892. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9371892

First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro

摘要

出版系列

Conference

存取文件

其它文件與鏈接

指紋

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