First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels

Ya Jui Tsou; Kai Shin Li; Jia Min Shieh; Wei Jen Chen; Hsiu Chih Chen; Yi Ju Chen; Cho Lun Hsu; Yao Min Huang; Fu Kuo Hsueh; Wen Hsien Huang; Wen Kuan Yeh; Huan Chi Shih; Pan Chun Liu; C. W. Liu; Yu Shen Yen; Chih Huang Lai; Jeng Hua Wei; Denny D. Tang; Jack Yuan Chen Sun

First Demonstration of Interface-Enhanced SAF Enabling 400^oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels

Ya Jui Tsou, Kai Shin Li, Jia Min Shieh^*, Wei Jen Chen, Hsiu Chih Chen, Yi Ju Chen, Cho Lun Hsu, Yao Min Huang, Fu Kuo Hsueh, Wen Hsien Huang, Wen Kuan Yeh, Huan Chi Shih, Pan Chun Liu, C. W. Liu, Yu Shen Yen, Chih Huang Lai, Jeng Hua Wei, Denny D. Tang, Jack Yuan Chen Sun

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

11 引文斯高帕斯（Scopus）

摘要

CMOS compatible 400^oC-robust 42 nm perpendicular spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) devices with the tunnel magnetoresistance (TMR) ratio of 130% is demonstrated for the first time by the interface-enhanced synthetic anti-ferromagnet (SAF) and the improved ion-beam etching (IBE). The record high 440^oC thermal robustness of SAF is achieved. The SAF field (HSAF) and the magnetic coupling between Co/Pt multilayer (ML) and reference layer are enhanced by the magnet-coupling fcc-texture multilayer (MCFTM) buffer. The Pt-Fe inter-diffusion during thermal stress is effectively reduced by the W(3Å)-based texture-decoupling diffusion multi-barrier (TDDMB) for magnetic field immunity. The composite SOT channel of TaN/W and Ta/W breaks the thickness limitation of β-W (< ~5 nm) and enlarges the MTJ etching window. The TaN/W channel exhibits the large effective spin Hall angle of ~ -0.27. The deterministic field-free SOT writing with spin-transfer torque (STT) assist is achieved. The size dependence on STT-assisted SOT switching is investigated using micromagnetic simulation.

原文	English
主出版物標題	2021 Symposium on VLSI Technology, VLSI Technology 2021
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9784863487802
出版狀態	Published - 2021
事件	41st Symposium on VLSI Technology, VLSI Technology 2021 - Virtual, Online, 日本持續時間: 13 6月 2021 → 19 6月 2021

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2021-June
ISSN（列印）	0743-1562

Conference

Conference	41st Symposium on VLSI Technology, VLSI Technology 2021
國家/地區	日本
城市	Virtual, Online
期間	13/06/21 → 19/06/21

其它文件與鏈接

Link to publication in Scopus

引用此

Tsou, Y. J., Li, K. S., Shieh, J. M., Chen, W. J., Chen, H. C., Chen, Y. J., Hsu, C. L., Huang, Y. M., Hsueh, F. K., Huang, W. H., Yeh, W. K., Shih, H. C., Liu, P. C., Liu, C. W., Yen, Y. S., Lai, C. H., Wei, J. H., Tang, D. D., & Sun, J. Y. C. (2021). First Demonstration of Interface-Enhanced SAF Enabling 400^oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels. 於 2021 Symposium on VLSI Technology, VLSI Technology 2021 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2021-June). Institute of Electrical and Electronics Engineers Inc..

Tsou, Ya Jui ; Li, Kai Shin ; Shieh, Jia Min 等. / First Demonstration of Interface-Enhanced SAF Enabling 400^oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels. 2021 Symposium on VLSI Technology, VLSI Technology 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{74b3173b32f84c66bc9ce3e6a8971560,

title = "First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels",

abstract = "CMOS compatible 400oC-robust 42 nm perpendicular spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) devices with the tunnel magnetoresistance (TMR) ratio of 130% is demonstrated for the first time by the interface-enhanced synthetic anti-ferromagnet (SAF) and the improved ion-beam etching (IBE). The record high 440oC thermal robustness of SAF is achieved. The SAF field (HSAF) and the magnetic coupling between Co/Pt multilayer (ML) and reference layer are enhanced by the magnet-coupling fcc-texture multilayer (MCFTM) buffer. The Pt-Fe inter-diffusion during thermal stress is effectively reduced by the W(3{\AA})-based texture-decoupling diffusion multi-barrier (TDDMB) for magnetic field immunity. The composite SOT channel of TaN/W and Ta/W breaks the thickness limitation of β-W (< ~5 nm) and enlarges the MTJ etching window. The TaN/W channel exhibits the large effective spin Hall angle of ~ -0.27. The deterministic field-free SOT writing with spin-transfer torque (STT) assist is achieved. The size dependence on STT-assisted SOT switching is investigated using micromagnetic simulation.",

author = "Tsou, {Ya Jui} and Li, {Kai Shin} and Shieh, {Jia Min} and Chen, {Wei Jen} and Chen, {Hsiu Chih} and Chen, {Yi Ju} and Hsu, {Cho Lun} and Huang, {Yao Min} and Hsueh, {Fu Kuo} and Huang, {Wen Hsien} and Yeh, {Wen Kuan} and Shih, {Huan Chi} and Liu, {Pan Chun} and Liu, {C. W.} and Yen, {Yu Shen} and Lai, {Chih Huang} and Wei, {Jeng Hua} and Tang, {Denny D.} and Sun, {Jack Yuan Chen}",

note = "Publisher Copyright: {\textcopyright} 2021 JSAP; 41st Symposium on VLSI Technology, VLSI Technology 2021 ; Conference date: 13-06-2021 Through 19-06-2021",

year = "2021",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 Symposium on VLSI Technology, VLSI Technology 2021",

address = "美國",

}

Tsou, YJ, Li, KS, Shieh, JM, Chen, WJ, Chen, HC, Chen, YJ, Hsu, CL, Huang, YM, Hsueh, FK, Huang, WH, Yeh, WK, Shih, HC, Liu, PC, Liu, CW, Yen, YS, Lai, CH, Wei, JH, Tang, DD & Sun, JYC 2021, First Demonstration of Interface-Enhanced SAF Enabling 400^oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels. 於 2021 Symposium on VLSI Technology, VLSI Technology 2021. Digest of Technical Papers - Symposium on VLSI Technology, 卷 2021-June, Institute of Electrical and Electronics Engineers Inc., 41st Symposium on VLSI Technology, VLSI Technology 2021, Virtual, Online, 日本, 13/06/21.

First Demonstration of Interface-Enhanced SAF Enabling 400^oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels. / Tsou, Ya Jui; Li, Kai Shin; Shieh, Jia Min 等.
2021 Symposium on VLSI Technology, VLSI Technology 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2021-June).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels

AU - Tsou, Ya Jui

AU - Li, Kai Shin

AU - Shieh, Jia Min

AU - Chen, Wei Jen

AU - Chen, Hsiu Chih

AU - Chen, Yi Ju

AU - Hsu, Cho Lun

AU - Huang, Yao Min

AU - Hsueh, Fu Kuo

AU - Huang, Wen Hsien

AU - Yeh, Wen Kuan

AU - Shih, Huan Chi

AU - Liu, Pan Chun

AU - Liu, C. W.

AU - Yen, Yu Shen

AU - Lai, Chih Huang

AU - Wei, Jeng Hua

AU - Tang, Denny D.

AU - Sun, Jack Yuan Chen

PY - 2021

Y1 - 2021

N2 - CMOS compatible 400oC-robust 42 nm perpendicular spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) devices with the tunnel magnetoresistance (TMR) ratio of 130% is demonstrated for the first time by the interface-enhanced synthetic anti-ferromagnet (SAF) and the improved ion-beam etching (IBE). The record high 440oC thermal robustness of SAF is achieved. The SAF field (HSAF) and the magnetic coupling between Co/Pt multilayer (ML) and reference layer are enhanced by the magnet-coupling fcc-texture multilayer (MCFTM) buffer. The Pt-Fe inter-diffusion during thermal stress is effectively reduced by the W(3Å)-based texture-decoupling diffusion multi-barrier (TDDMB) for magnetic field immunity. The composite SOT channel of TaN/W and Ta/W breaks the thickness limitation of β-W (< ~5 nm) and enlarges the MTJ etching window. The TaN/W channel exhibits the large effective spin Hall angle of ~ -0.27. The deterministic field-free SOT writing with spin-transfer torque (STT) assist is achieved. The size dependence on STT-assisted SOT switching is investigated using micromagnetic simulation.

AB - CMOS compatible 400oC-robust 42 nm perpendicular spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) devices with the tunnel magnetoresistance (TMR) ratio of 130% is demonstrated for the first time by the interface-enhanced synthetic anti-ferromagnet (SAF) and the improved ion-beam etching (IBE). The record high 440oC thermal robustness of SAF is achieved. The SAF field (HSAF) and the magnetic coupling between Co/Pt multilayer (ML) and reference layer are enhanced by the magnet-coupling fcc-texture multilayer (MCFTM) buffer. The Pt-Fe inter-diffusion during thermal stress is effectively reduced by the W(3Å)-based texture-decoupling diffusion multi-barrier (TDDMB) for magnetic field immunity. The composite SOT channel of TaN/W and Ta/W breaks the thickness limitation of β-W (< ~5 nm) and enlarges the MTJ etching window. The TaN/W channel exhibits the large effective spin Hall angle of ~ -0.27. The deterministic field-free SOT writing with spin-transfer torque (STT) assist is achieved. The size dependence on STT-assisted SOT switching is investigated using micromagnetic simulation.

UR - http://www.scopus.com/inward/record.url?scp=85119421379&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85119421379

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2021 Symposium on VLSI Technology, VLSI Technology 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 41st Symposium on VLSI Technology, VLSI Technology 2021

Y2 - 13 June 2021 through 19 June 2021

ER -

Tsou YJ, Li KS, Shieh JM, Chen WJ, Chen HC, Chen YJ 等. First Demonstration of Interface-Enhanced SAF Enabling 400^oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels. 於 2021 Symposium on VLSI Technology, VLSI Technology 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (Digest of Technical Papers - Symposium on VLSI Technology).

First Demonstration of Interface-Enhanced SAF Enabling 400oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels

摘要

出版系列

Conference

其它文件與鏈接

指紋

引用此

First Demonstration of Interface-Enhanced SAF Enabling 400^oC-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels