First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes

C. Y. Yang*, P. J. Sung, M. H. Chuang, C. W. Chang, Y. J. Shih, T. Y. Huang, D. D. Lu, T. C. Hong, X. R. Yu, W. H. Lu, S. W. Chang, J. J. Tsai, M. K. Huang, T. C. Cho, Y. J. Lee, K. L. Luo, C. T. Wu, C. J. Su, K. H. Kao, T. S. ChaoW. F. Wu, Y. H. Wang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

This study proposes and demonstrates a novel heterogeneous L-shaped FET (LFET) structure consisting of a vertical epitaxially-grown Ge pFET above a lateral Si nFET for the first time. The fabrication challenges of the heterogeneous CFET structure, consisting of a lateral Ge pFET and a lateral Si nFET, are greatly alleviated with the new LFET design. Despite comparable layout footprint for logic and SRAM cells, LFET outperforms CFET with lower parasitic resistances and capacitances for the p-channel device, both leading to reduced gate delay, particularly for the low-to-high logic transition, according to TCAD simulations. LFET exhibits 32.5% lower power for the same operating frequency, or 35% frequency gain for the same operating power. Heterogenous LFET devices with junctionless channels and high- kappa and metal gate stacks are successfully fabricated on SOI substrate, with operational n-channel, p-channel devices, and CMOS inverters.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2021-2024
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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