First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications

S. W. Chang, T. H. Lu, C. Y. Yang, C. J. Yeh, M. K. Huang, C. F. Meng, P. J. Chen, T. H. Chang, Y. S. Chang, J. W. Jhu, T. Z. Hong, C. C. Ke, X. R. Yu, W. H. Lu, M. A. Baig, T. C. Cho, P. J. Sung, C. J. Su, F. K. Hsueh, B. Y. ChenH. H. Hu, C. T. Wu, K. L. Lin, W. C.Y. Ma, D. D. Lu, K. H. Kao, Y. J. Lee, C. L. Lin, K. P. Huang, K. M. Chen, Yi-Ming Li, S. Samukawa, Tien-Sheng Chao, G. W. Huang, W. F. Wu, W. H. Lee, J. Y. Li, J. M. Shieh, Jenn-Hwan Tarng, Y. H. Wang, Wen-Kuan Yeh*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this work, we demonstrate vertically stacked heterogeneous dual-workfunction gate complementary FET (CFET) inverters and 6T-SRAM with n-Type IGZO and p-Type polysilicon channels for the first time. The dual-workfunction gate structure with adjusted gate biasing allows the adjustment of channel potential to match the threshold voltage of transistors for CMOS and SRAM operation. High-frequency IGZO RF devices with p-Type silicon isolation are fabricated simultaneously with the same process. Novel etching process based on fluorine-based gas with an extremely high-etching selectivity between the source/drain metal and the IGZO facilitates the definition of the source/drain region. IGZO surface treated with fluorine-based gas during over-etching step allows a low leakage current shallow passivation layer to optimize direct current characteristics.

原文English
主出版物標題2021 IEEE International Electron Devices Meeting, IEDM 2021
發行者Institute of Electrical and Electronics Engineers Inc.
頁面34.4.1-34.4.4
ISBN(電子)9781665425728
DOIs
出版狀態Published - 2021
事件2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
持續時間: 11 12月 202116 12月 2021

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2021-December
ISSN(列印)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
國家/地區United States
城市San Francisco
期間11/12/2116/12/21

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