First Demonstration of GAA Monolayer-MoS2Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

Yun Yan Chung*, Bo Jhih Chou, Chen Feng Hsu, Wei Sheng Yun, Ming Yang Li, Sheng Kai Su, Yu Tsung Liao, Meng Chien Lee, Guo Wei Huang, San Lin Liew, Yun Yang Shen, Wen Hao Chang, Chien Wei Chen, Chi Chung Kei, Han Wang, H. S. Philip Wong, T. Y. Lee, Chao Hsin Chien, Chao Ching Cheng, Iuliana P. Radu

*此作品的通信作者

研究成果: Conference contribution同行評審

21 引文 斯高帕斯(Scopus)

摘要

This work demonstrates the first successful integration of monolayer MoS2 nanosheet FET in a gate-all-around configuration. At a gate length of 40nm, the transistor exhibits a remarkable mathrm{I}-{ mathrm{ON}} sim 410 mu mathrm{A}/ { mu} mathrm{m} at mathrm{V}-{ mathrm{DS}}=1 mathrm{V}, achieved with a monolayer channel, '0.7 nm thin. The FET has a large mathrm{I}-{ mathrm{ON}}/ mathrm{I}-{ mathrm{OFF}} gt 1 mathrm{E}8, positive mathrm{V}-{ mathrm{TH}} sim 1.4 mathrm{V} with nearly zero DIBL. Higher drive current can be achieved through stacking of multiple channel layers. We propose here a fully integrated flow and we detail the feasibility of the most critical modules: stack/channel preparation, fin patterning, inner spacer, channel release, contact. The successful demonstration of MoS2 NS with high performance and of the stacked NS modules further clarifies the value proposition in 2D materials for transistor scaling.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面3451-3454
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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