First demonstration of flexible poly-Si nano-FETs (W/Lg= 50/80 nm) on the polyimide utilizing multi-wavelength laser annealing assisted by laser-buffer layer

Po Cheng Hou, Wen Hsien Huang*, Ming Hsuan Kao, Shih Wei Chen, Hsing Hsiang Wang, Chang Hong Shen, Jia Min Shieh, Fu Ming Pan, Li Chang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Laser-buffer layer (LBL) of SiO2/W/SiO2 facilitates latent-heat dissipation and poly-grains growth by ultraviolet-laser crystallization. CO2 laser used for dopant activation forms high reflectivity on TiN and LBL to efficiently prevent TiN-gate and PI damage, further reducing S/D resistance with less dopant-diffusion. Employing LBL and multi-wavelength lasers enables directly nano-FET (W/Lg= 50/80 nm) fabrication on PI. The first-demonstrated flexible nano-FETs performs S.S of 120 mV/dec. and DIBL of 210 mV/V measured at bending radius of 10 mm.

原文English
主出版物標題6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面179-181
頁數3
ISBN(電子)9781665421775
DOIs
出版狀態Published - 2022
事件6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
持續時間: 6 3月 20229 3月 2022

出版系列

名字6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
國家/地區Japan
城市Virtual, Online
期間6/03/229/03/22

指紋

深入研究「First demonstration of flexible poly-Si nano-FETs (W/Lg= 50/80 nm) on the polyimide utilizing multi-wavelength laser annealing assisted by laser-buffer layer」主題。共同形成了獨特的指紋。

引用此