First BEOL-compatible IGZO Ferroelectic-Modulated Diode with Drastically Enhanced Memory Window: Experiment, Modeling, and Deep Understanding

Tackling the key challenge of the weak erase in oxide semiconductor (OS) FeFETs, for the first time, we experimentally demonstrate a back-end-of-line (BEOL)-compatible IGZO-based ferroelectric-modulated diode (FMD), which effectively doubles the memory window (MW) of the FeFET fabricated under the same process conditions. To provide a clear understanding of the MW enhancement, we develop and establish a comprehensive simulation framework that reveals the interplay between ferroelectric polarization and the current rectified by the metal- semiconductor Schottky diode. Furthermore, through a combination of experimental measurement and theoretical calculation, we validate the performance of our novel FMD device in overcoming the weak erase problem of OS FeFETs. Our study demonstrates the tremendous promise of our FMD for future data storage and in-memory computing applications.