@inproceedings{89f4cc7d4a3d40fa841ed874ff43f64a,
title = "First BEOL-compatible, 10 ns-fast, and Durable 55 nm Top-pSOT-MRAM with High TMR (>130%)",
abstract = "We demonstrated a novel Top-pSOT-MRAM structure by directly fabricating the SOT channel on top of a standard STT-MTJ device. This integration breakthrough significantly simplifies the implementation of SOT technology, as it leverages the standard STT-MRAM process flow. The key element of our proposed Top-pSOT-MRAM is the top electrode comprising a Ru etch-stop layer and a W/Ta composite SOT material, which serves as a bridge connecting the free layer of the MTJ and the Top SOT channel. This Top-pSOT-MRAM device exhibits a high TMR exceeding 130% and excellent thermal stability during the BEOL process up to 400oC. When assisted by STT, the field-free SOT switching achieves impressive speed, as fast as 10 ns, and demonstrates robust endurance exceeding 1010 cycles. Top-pSOT-MRAM at a scaled size of 55 nm maintains a high thermal stability factor (?) of 62, guaranteeing a retention time of 10 years with a low error rate of 1 ppm.",
author = "Li, {Kai Shin} and Shieh, {Jia Min} and Chen, {Yi Ju} and Hsu, {Cho Lun} and Shen, {Chang Hong} and Hou, {Tuo Hung} and Lin, {Chia Ping} and Lai, {Chih Huang} and Tang, {Denny D.} and {Yuan-Chen Sun}, Jack",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Electron Devices Meeting, IEDM 2023 ; Conference date: 09-12-2023 Through 13-12-2023",
year = "2023",
doi = "10.1109/IEDM45741.2023.10413685",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 International Electron Devices Meeting, IEDM 2023",
address = "美國",
}