FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

Yogesh Singh Chauhan*, Darsen D. Lu, Sriramkumar Vanugopalan, Sourabh Khandelwal, Juan Pablo Duarte, Navid Paydavosi, Ali Niknejad, Chen-Ming Hu

*此作品的通信作者

研究成果: Book同行評審

93 引文 斯高帕斯(Scopus)

摘要

This book is the first to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: • Why you should use FinFET • The physics and operation of FinFET • Details of the FinFET standard model (BSIM-CMG) • Parameter extraction in BSIM-CMG • FinFET circuit design and simulation • Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts' insight into the specifications of the standard • The first book on the industry-standard FinFET model - BSIM-CMG.

原文English
發行者Elsevier Inc.
頁數292
ISBN(電子)9780124200852
ISBN(列印)9780124200319
DOIs
出版狀態Published - 18 二月 2015

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