Fine-Feature Cu/In Interconnect Bonding Using Single Sided Heating and Chip-to-Wafer Bonding Technology

Shih Wei Lee, Ching Yun Chang, Geng Ming Chang, Kuan-Neng Chen*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A submicron-thick Cu/In bonding by using single sided heating approach has been successfully demonstrated on chip-to-wafer-level without antioxidant metal coating. The single sided heating approach can successfully prevent oxidation of Cu metal on the wafer during bonding. As compared with double sided heating method, a lower specific contact resistance can be obtained in single sided heating method. In addition, post-bonding annealing can further improve the bonding quality. Excellent electrical performances of reliability tests show a great potential for future highly dense interconnect.

原文English
文章編號7797449
頁(從 - 到)128-131
頁數4
期刊IEEE Journal of the Electron Devices Society
5
發行號2
DOIs
出版狀態Published - 1 三月 2017

指紋

深入研究「Fine-Feature Cu/In Interconnect Bonding Using Single Sided Heating and Chip-to-Wafer Bonding Technology」主題。共同形成了獨特的指紋。

引用此