Field-effect-dependent thermoelectric power in highly resistive Sb2Se3 single nanowire

Kien-Wen Sun*, Ting Yu Ko, Muthaiah Shellaiah

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this paper, we report the results of our experiments on and measurements of electrical resistivity and thermoelectric power (Seebeck coefficient) from single-crystalline antimony triselenide (Sb2Se3) single nanowires (NWs) with high resistivity (σ ~ 4.37 × 10−4 S/m). A positive Seebeck coefficient of approximately 661 µV/K at room temperature was obtained using a custom-made thermoelectric power probe with an alternating current lock-in method (the 2ω technique), which indicates that the thermal transport is dominated by holes. The measured Seebeck coefficient of the NWs is a factor of 2–3 lower than their bulk counterparts and is comparable to that of a highly conductive Sb2Se3 single NWs (approximately − 750 µV/K). We observed an increase in the Seebeck coefficients with increased bias voltages by field-effect gating, which cannot be explained by the modulation of the Fermi level in the NWs.

原文English
文章編號317
期刊Applied Physics A: Materials Science and Processing
124
發行號4
DOIs
出版狀態Published - 1 四月 2018

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