Field dependence of two large hole capture cross sections in thermal oxide on silicon

Joseph Jengtao Tzou*, Jack Yuan Chen Sun, Chih Tang Sah

*此作品的通信作者

研究成果: Article同行評審

40 引文 斯高帕斯(Scopus)

摘要

The oxide field dependence of the hole capture cross sections of two oxide hole traps is reported. The capture cross section varies with the average oxide field as E-nox with n≅0.6 for the 10- 13 cm2 hole trap and n≅0.4 for the 10 -14 cm2 hole trap. The observed field dependences can be explained by the potential lowering of a highly localized neutral potential, V(r)=A/rm, with m=4 for the 10 -13 cm2 hole trap and m=6.5 for the 10-14 cm2 hole trap.

原文English
頁(從 - 到)861-863
頁數3
期刊Applied Physics Letters
43
發行號9
DOIs
出版狀態Published - 1983

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