Ferroelectric Undoped HfOx Capacitor With Symmetric Synaptic for Neural Network Accelerator

Jun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Yun-Tien Yeh, Hao-Tung Chung, Yi-Shao Li, Kai-Chi Chuang, Wei-Shuo Li, Chun-Yu Liao, Pin-Guang Chen, Kuan-Neng Chen, Min-Hung Lee, Huang-Chung Cheng

    研究成果: Article同行評審

    摘要

    A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O-2 plasma periods. The metal-ferroelectric-metal (MFM) capacitor presents excellent remnant polarization (P-r) up to 13 mu C/cm(2) and a switching endurance of more than 10(8) cycles. Superior small potentiation/depression nonlinearity (alpha(p)/alpha(d) = -0.08 /-1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve ( vertical bar alpha(p) - alpha(d)vertical bar) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse).

    原文American English
    頁(從 - 到)1374-1377
    頁數4
    期刊IEEE Transactions on Electron Devices
    68
    發行號3
    DOIs
    出版狀態Published - 三月 2021

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