@inproceedings{4f7bbcb94a4a4b7cb7a46bcd0dcabf65,
title = "Ferroelectric Properties of HZO Ferroelectric Capacitors with Various Capping Electrodes and Annealing Conditions",
abstract = "In this study, the ferroelectric HfZrO2 (HZO) Metal-Ferroelectric-Metal (MFM) structures with the various metal electrodes including TiN, W, Mo, TaN (i.e. MFM=TiN/HZO/TiN, W/HZO/W, Mo/HZO/Mo, TaN/HZO/TaN) were fabricated. We have characterized the ferroelectric properties and microstructure of these MFM structures at various annealing temperature. The orthorhombic phase of samples with different electrodes and annealing temperature were investigated by grazing incidence x-ray diffraction (GIXRD). Microstructure analysis for the MFM capacitors were also conducted using TEM. The trends in remanent polarization and the coercive field of MFM capacitors with differed electrodes were compared by the polarization-voltage (P-V) measurements.",
author = "Lin, {Jing Wei} and Liang, {Yan Kui} and Yu Chen and Li, {Zhen Hao} and Chiang, {Tsung Che} and Liu, {Po Tsun} and Chang, {Edward Yi} and Lin, {Chun Hsiung}",
note = "Publisher Copyright: {\textcopyright} 2021 ECS-The Electrochemical Society.; 240th ECS Meeting ; Conference date: 10-10-2021 Through 14-10-2021",
year = "2021",
doi = "10.1149/10403.0031ecst",
language = "English",
volume = "104",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "3",
pages = "31--34",
booktitle = "240th ECS Meeting - Semiconductors, Dielectrics, and Metals for Nanoelectronics 18",
address = "英國",
edition = "3",
}