Ferroelectric Properties of HZO Ferroelectric Capacitors with Various Capping Electrodes and Annealing Conditions

Jing Wei Lin, Yan Kui Liang, Yu Chen, Zhen Hao Li, Tsung Che Chiang, Po Tsun Liu, Edward Yi Chang, Chun Hsiung Lin

研究成果: Conference contribution同行評審

摘要

In this study, the ferroelectric HfZrO2 (HZO) Metal-Ferroelectric-Metal (MFM) structures with the various metal electrodes including TiN, W, Mo, TaN (i.e. MFM=TiN/HZO/TiN, W/HZO/W, Mo/HZO/Mo, TaN/HZO/TaN) were fabricated. We have characterized the ferroelectric properties and microstructure of these MFM structures at various annealing temperature. The orthorhombic phase of samples with different electrodes and annealing temperature were investigated by grazing incidence x-ray diffraction (GIXRD). Microstructure analysis for the MFM capacitors were also conducted using TEM. The trends in remanent polarization and the coercive field of MFM capacitors with differed electrodes were compared by the polarization-voltage (P-V) measurements.

原文English
主出版物標題240th ECS Meeting - Semiconductors, Dielectrics, and Metals for Nanoelectronics 18
發行者IOP Publishing Ltd.
頁面31-34
頁數4
104
版本3
ISBN(電子)9781607685395
DOIs
出版狀態Published - 2021
事件240th ECS Meeting - Orlando, United States
持續時間: 10 10月 202114 10月 2021

出版系列

名字ECS Transactions
號碼3
104
ISSN(列印)1938-6737
ISSN(電子)1938-5862

Conference

Conference240th ECS Meeting
國家/地區United States
城市Orlando
期間10/10/2114/10/21

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