In this study, the ferroelectric HfZrO2 (HZO) Metal-Ferroelectric-Metal (MFM) structures with the various metal electrodes including TiN, W, Mo, TaN (i.e. MFM=TiN/HZO/TiN, W/HZO/W, Mo/HZO/Mo, TaN/HZO/TaN) were fabricated. We have characterized the ferroelectric properties and microstructure of these MFM structures at various annealing temperature. The orthorhombic phase of samples with different electrodes and annealing temperature were investigated by grazing incidence x-ray diffraction (GIXRD). Microstructure analysis for the MFM capacitors were also conducted using TEM. The trends in remanent polarization and the coercive field of MFM capacitors with differed electrodes were compared by the polarization-voltage (P-V) measurements.