Ferroelectric properties and microstructure of SBT thin films with modified Ta compositions

Fan Yi Hsu*, Chen Ti Hu, Ching Chich Leu, Chao-Hsin Chien

*此作品的通信作者

    研究成果: Conference contribution同行評審

    摘要

    The effect of Ta content on the ferroelectric properties of SrBi 2 Ta 1.8 O 9 (SBT) thin films which had been synthesized with MOD and spin coating techniques was investigated in present study. It is found that the electrical properties and microstructures of SBT are greatly affected by the Ta content. Polarization measurements revealed that the Ta-deficiency in SBT led to a relatively low coercive field (2E c ∼ 108 kV/cm) and a high remanent polarization (2P r ∼ 18.4μC/cm 2 ). Once increases the Ta ratio, the 2P r .value decreasing. The Ta-rich SrBi 2 Ta 2.2 O 9 thin films exhibit the poor crystallinity and the poor ferroelectric properties. The improvement of ferroelectric properties in Ta-deficient SBT specimens could be attributed to the uniformly large grain structure and the highly (220) preferential orientation. It is believed that the incorporation of the Ta vacancies during synthesizing process plays an important role in promoting the crystallinity of SiBi 2 Ta 1.8 O 9 films.

    原文English
    主出版物標題Dielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia
    頁面151-161
    頁數11
    出版狀態Published - 5 5月 2006
    事件Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia - Quebec City, QC, Canada
    持續時間: 15 5月 200520 5月 2005

    出版系列

    名字Proceedings - Electrochemical Society
    PV 2005-13

    Conference

    ConferenceDielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia
    國家/地區Canada
    城市Quebec City, QC
    期間15/05/0520/05/05

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