Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

Sheng Luo; Yihan He; Baofang Cai; Xiao Gong; Gengchiau Liang

doi:10.1109/EDTM55494.2023.10103119

Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

Sheng Luo^*, Yihan He, Baofang Cai, Xiao Gong, Gengchiau Liang^*

^*此作品的通信作者

前瞻半導體研究所

研究成果: Conference contribution › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.

原文	English
主出版物標題	7th IEEE Electron Devices Technology and Manufacturing Conference
主出版物子標題	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103119
出版狀態	Published - 2023
事件	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, 韓國持續時間: 7 3月 2023 → 10 3月 2023

出版系列

名字	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
國家/地區	韓國
城市	Seoul
期間	7/03/23 → 10/03/23

存取文件

10.1109/EDTM55494.2023.10103119

其它文件與鏈接

Link to publication in Scopus

引用此

Luo, S., He, Y., Cai, B., Gong, X., & Liang, G. (2023). Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. 於 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103119

Luo, Sheng ; He, Yihan ; Cai, Baofang 等. / Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{f902fc2246cb4114b232707ce6d24cd4,

title = "Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing",

abstract = "Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.",

author = "Sheng Luo and Yihan He and Baofang Cai and Xiao Gong and Gengchiau Liang",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10103119",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

address = "美國",

}

Luo, S, He, Y, Cai, B, Gong, X & Liang, G 2023, Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. 於 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, 韓國, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10103119

Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. / Luo, Sheng; He, Yihan; Cai, Baofang 等.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

AU - Luo, Sheng

AU - He, Yihan

AU - Cai, Baofang

AU - Gong, Xiao

AU - Liang, Gengchiau

PY - 2023

Y1 - 2023

N2 - Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.

AB - Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.

UR - http://www.scopus.com/inward/record.url?scp=85158146613&partnerID=8YFLogxK

U2 - 10.1109/EDTM55494.2023.10103119

DO - 10.1109/EDTM55494.2023.10103119

M3 - Conference contribution

AN - SCOPUS:85158146613

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

Luo S, He Y, Cai B, Gong X, Liang G. Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. 於 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103119

Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

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