Ferroelectric HfO2 capacitors for varactor application in GHz

Y. W. Lin, K. Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, Y. F. Tsao, T. J. Huang, H. T. Hsu, K. Kakushima

研究成果: Conference contribution同行評審

摘要

Capacitance measurements of a ferroelectric Y-doped HfO2 film at 1 GHz are performed. By applying a bias voltage within the non-switching region of the ferroelectric film, the change in the capacitance has been confirmed. The results suggest the feasibility of ferroelectric HfO2 films for varactor application in high frequency region.

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