Ferroelectric control of the conduction at the LaAlO 3 /SrTiO 3 heterointerface

Vu Thanh Tra, Jhih Wei Chen, Po Cheng Huang, Bo Chao Huang, Ye Cao, Chao Hui Yeh, Heng Jui Liu, Eugene A. Eliseev, Anna N. Morozovska, Jiunn-Yuan Lin*, Yi Chun Chen, Ming Wen Chu, Po Wen Chiu, Ya Ping Chiu, Long Qing Chen, Chung Lin Wu, Ying-hao Chu

*此作品的通信作者

研究成果: Article同行評審

81 引文 斯高帕斯(Scopus)

摘要

Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (P up ) leads to charge depletion and consequently low conduction. Switching the polarization direction (P down ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

原文English
頁(從 - 到)3357-3364
頁數8
期刊Advanced Materials
25
發行號24
DOIs
出版狀態Published - 25 6月 2013

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