Ferroelectric characterization in ultrathin Hf0.5Zr0.5O2 MFIS capacitors by piezoresponse force microscopy (PFM) in vacuum

Cheng Hung Wu, Artur Useinov*, Tian Li Wu, Chun Jung Su

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Ferroelectric HfO2-doped compounds, which are well-known CMOS compatible dielectric materials, have the promising applications in memory, logic and neuromorphic devices [1]. Based on typical metal ferroelectric insulator semiconductor (MFIS) capacitor structure with the sub-5nm ferroelectric layer, the ferroelectric characterization becomes the challenge since the presence of tunneling leakage or screening effects from surface charge traps dramatically reduce the signal to noise ratio. Since the devices obtain a weak signal from polarization (P) itself, this leads to the complicated evaluation of ferroelectric properties of such ultrathin layers [2]-[3]. In this study, we fabricated 5 nm and 2 nm Hf0.5Zr0.5O2 (HZO) MFIS capacitors and demonstrate alternative vacuum-based piezoresponse force microscopy (PFM) characterization, which is still enables to see P-response in ultrathin films due to increased quality factor of the tip-surface resonance. Electrical measurements such as polarization-voltage (P-V) and capacitance-voltage (C-V) characterristics gives additional information about remnant and saturated polarizations: Pr and Ps, respectively.

原文English
主出版物標題VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781665419345
DOIs
出版狀態Published - 19 4月 2021
事件2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan
持續時間: 19 4月 202122 4月 2021

出版系列

名字VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
國家/地區Taiwan
城市Hsinchu
期間19/04/2122/04/21

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