FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

K. Y. Hsiang; J. Y. Lee; F. S. Chang; Z. F. Lou; Z. X. Li; Z. H. Li; J. H. Chen; C. W. Liu; T. H. Hou; M. H. Lee

doi:10.23919/VLSITechnologyandCir57934.2023.10185274

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

K. Y. Hsiang^*, J. Y. Lee, F. S. Chang, Z. F. Lou, Z. X. Li, Z. H. Li, J. H. Chen, C. W. Liu, T. H. Hou, M. H. Lee^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.

原文	English
主出版物標題	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9784863488069
DOIs	https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185274
出版狀態	Published - 2023
事件	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, 日本持續時間: 11 6月 2023 → 16 6月 2023

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2023-June
ISSN（列印）	0743-1562

Conference

Conference	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
國家/地區	日本
城市	Kyoto
期間	11/06/23 → 16/06/23

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10.23919/VLSITechnologyandCir57934.2023.10185274

其它文件與鏈接

Link to publication in Scopus

引用此

Hsiang, K. Y., Lee, J. Y., Chang, F. S., Lou, Z. F., Li, Z. X., Li, Z. H., Chen, J. H., Liu, C. W., Hou, T. H., & Lee, M. H. (2023). FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. 於 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185274

Hsiang, K. Y. ; Lee, J. Y. ; Chang, F. S. 等. / FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology).

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title = "FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations",

abstract = "Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.",

keywords = "Endurance, Ferroelectric, Recovery",

author = "Hsiang, {K. Y.} and Lee, {J. Y.} and Chang, {F. S.} and Lou, {Z. F.} and Li, {Z. X.} and Li, {Z. H.} and Chen, {J. H.} and Liu, {C. W.} and Hou, {T. H.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

year = "2023",

doi = "10.23919/VLSITechnologyandCir57934.2023.10185274",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023",

address = "美國",

}

Hsiang, KY, Lee, JY, Chang, FS, Lou, ZF, Li, ZX, Li, ZH, Chen, JH, Liu, CW, Hou, TH & Lee, MH 2023, FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. 於 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Digest of Technical Papers - Symposium on VLSI Technology, 卷 2023-June, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, Kyoto, 日本, 11/06/23. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185274

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. / Hsiang, K. Y.; Lee, J. Y.; Chang, F. S. 等.
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2023-June).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

AU - Hsiang, K. Y.

AU - Lee, J. Y.

AU - Chang, F. S.

AU - Lou, Z. F.

AU - Li, Z. X.

AU - Li, Z. H.

AU - Chen, J. H.

AU - Liu, C. W.

AU - Hou, T. H.

AU - Lee, M. H.

PY - 2023

Y1 - 2023

N2 - Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.

AB - Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.

KW - Endurance

KW - Ferroelectric

KW - Recovery

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U2 - 10.23919/VLSITechnologyandCir57934.2023.10185274

DO - 10.23919/VLSITechnologyandCir57934.2023.10185274

M3 - Conference contribution

AN - SCOPUS:85167573575

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

Y2 - 11 June 2023 through 16 June 2023

ER -

Hsiang KY, Lee JY, Chang FS, Lou ZF, Li ZX, Li ZH 等. FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. 於 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSITechnologyandCir57934.2023.10185274

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

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