FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

K. Y. Hsiang*, J. Y. Lee, F. S. Chang, Z. F. Lou, Z. X. Li, Z. H. Li, J. H. Chen, C. W. Liu, T. H. Hou, M. H. Lee*

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.

原文English
主出版物標題2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9784863488069
DOIs
出版狀態Published - 2023
事件2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan
持續時間: 11 6月 202316 6月 2023

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2023-June
ISSN(列印)0743-1562

Conference

Conference2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
國家/地區Japan
城市Kyoto
期間11/06/2316/06/23

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