Fault models and test methods for subthreshold SRAMs

Chen Wei Lin*, Hung Hsin Chen, Hao Yu Yang, Chia-Tso Chao, Rei Fu Huang

*此作品的通信作者

    研究成果: Conference contribution同行評審

    4 引文 斯高帕斯(Scopus)

    摘要

    Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold-SRAM design. However, the test methods regarding those newly developed subthreshold-SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold-SRAM designs into three types, study the faulty behavior of different open defects for each type of designs, and then identify the faults which may or may not be covered by a traditional SRAM test method. For those hard-to-detect faults, we will further discuss the corresponding test method according to different each type of subthreshold-SRAM designs. At last, a discussion about the temperature at test will also be provided.

    原文English
    主出版物標題Proceedings - International Test Conference 2010, ITC 2010
    發行者Institute of Electrical and Electronics Engineers Inc.
    ISBN(列印)9781424472055
    DOIs
    出版狀態Published - 2010
    事件41st International Test Conference, ITC 2010 - Austin, TX, United States
    持續時間: 31 10月 20105 11月 2010

    出版系列

    名字Proceedings - International Test Conference
    ISSN(列印)1089-3539

    Conference

    Conference41st International Test Conference, ITC 2010
    國家/地區United States
    城市Austin, TX
    期間31/10/105/11/10

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