Fault models and test methods for subthreshold SRAMs

Chen Wei Lin*, Hung Hsin Chen, Hao Yu Yang, Chin Yuan Huang, Chia-Tso Chao, Rei Fu Huang

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold SRAM design. However, the test methods regarding those newly developed subthreshold SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold SRAM designs into three types, study the faulty behavior of open defects and address decoders faults on each type of designs, and then identify the faults which may not be covered by a traditional SRAM test method. We will also discuss the impact of open defects and threshold-voltage mismatch on sense amplifiers under subthreshold operations. A discussion about the temperature at test is also provided.

原文English
文章編號6425383
頁(從 - 到)468-481
頁數14
期刊IEEE Transactions on Computers
62
發行號3
DOIs
出版狀態Published - 11 二月 2013

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